activity
20202025
most citedSnO/-Ga2O3 vertical heterojunction diodes

96 citations · 342 across the 11 of their papers we have counts for

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Showing 2020Show all

6 papers · 1 filter

cond-mat.mtrl-sci2020★ 44 cited

Offcut-related step-flow and growth rate enhancement during (100) -Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)

Piero Mazzolini, Andreas Falkenstein, Zbigniew Galazka +2

In this work we investigate the growth of -Ga2O3 homoepitaxial layers on top of (100) oriented substrates via indium-assisted metal exchange catalyzed molecular beam epitaxy (ME…

physics.app-ph2020★ 96 cited

SnO/-Ga2O3 vertical heterojunction diodes

Melanie Budde, Daniel Splith, Piero Mazzolini +6

Vertical heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped -type SnO layers with hole concentrations ranging from $p=10…

cond-mat.mtrl-sci2020★ 45 cited

Isotopic study of Raman active phonon modes in -GaO

Benjamin M. Janzen, Piero Mazzolini, Roland Gillen +5

Holding promising applications in power electronics, the wide band gap material gallium oxide has emerged as a vital alternative to materials like GaN and SiC. The detailed study o…

cond-mat.mtrl-sci2020★ 19 cited

Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass

Melanie Budde, Piero Mazzolini, Johannes Feldl +6

Transparent conducting or semiconducting oxides are important materials for (transparent) optoelectronics and power electronics applications. While most of these oxides can be dope…

cond-mat.mtrl-sci2020★ 68 cited

Influence of Polymorphism on the Electronic Structure of GaO

Jack E. N. Swallow, Christian Vorwerk, Piero Mazzolini +21

The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. GaO has emerged as an altern…

cond-mat.mtrl-sci2020★ 45 cited

Towards smooth (010) beta-Ga2O3 films homoepitaxially grown by plasma assisted molecular beam epitaxy: The impact of substrate offcut and metal-to-oxygen flux ratio

Piero Mazzolini, Oliver Bierwagen

Smooth interfaces and surfaces are beneficial for most (opto)electronic devices based on thin films and their heterostructures. For example, smoother interfaces in (010) beta-Ga2O3…