102 citations · 117 across the 5 of their papers we have counts for
5 papers
Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile suboxide: The examples of Ga and Ge
Wenshan Chen, Kingsley Egbo, Huaide Zhang +2
The delivery of an elemental cation flux to the substrate surface in the oxide molecular beam epitaxy (MBE) chamber has been utilized not only for the epitaxial growth of oxide thi…
NiGaO interfacial layers in NiO/GaO heterojunction diodes at high temperature
Kingsley Egbo, Emily M. Garrity, William A. Callahan +6
NiO/GaO heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we…
Acceptor and compensating donor doping of single crystalline SnO (001) films grown by molecular beam epitaxy and its perspectives for optoelectronics and gas-sensing
Kingsley Egbo, Jonas Lähnemann, Andreas Falkenstein +2
(La and Ga)-doped tin monoxide (stannous oxide, tin (II) oxide, SnO) thin films were grown by plasma-assisted and suboxide molecular beam epitaxy with dopant concentrations ranging…
Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy
Kingsley Egbo, Esperanza Luna, Jonas Lähnemann +7
By employing a mixed SnO+Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1…
Vacancy defects induced changes in the electronic and optical properties of NiO studied by spectroscopic ellipsometry and first-principles calculations
Kingsley O. Egbo, Chao Ping Liu, Chinedu E. Ekuma +1
Native defects in semiconductors play an important role in their optoelectronic properties. Nickel oxide (NiO) is one of the few wide-gap p-type oxide semiconductors and its conduc…