K. Egbo

activity

20202024

most citedVacancy defects induced changes in the electronic and optical properties of NiO studied by spectroscopic ellipsometry and first-principles calculations

102 citations · 117 across the 5 of their papers we have counts for

collaborators

Showing 2024Show all

2 papers · 1 filter

cond-mat.mtrl-sci2024★ 2 cited

Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile suboxide: The examples of Ga and Ge

Wenshan Chen, Kingsley Egbo, Huaide Zhang +2

The delivery of an elemental cation flux to the substrate surface in the oxide molecular beam epitaxy (MBE) chamber has been utilized not only for the epitaxial growth of oxide thi…

cond-mat.mtrl-sci2024

NiGa $_{2}$ O $_{4}$ interfacial layers in NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes at high temperature

Kingsley Egbo, Emily M. Garrity, William A. Callahan +6

NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we…

Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile suboxide: The examples of Ga and Ge

NiGa2​O4​ interfacial layers in NiO/Ga2​O3​ heterojunction diodes at high temperature

NiGa $_{2}$ O $_{4}$ interfacial layers in NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes at high temperature