Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC

A. Csóré, N. T. Son, A. Gali

The negatively charged silicon vacancy [V${}_{\text{Si}}(-)$] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V${}_{\text{Si}}(-)$ defect possesses…