81 citations · 189 across the 5 of their papers we have counts for
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cond-mat.mtrl-sci2021★ 15 cited
Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC
A. Csóré, N. T. Son, A. Gali
The negatively charged silicon vacancy [V] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V defect possesses…
cond-mat.mtrl-sci2018★ 75 cited
Excitation properties of the divacancy in 4H-SiC
Björn Magnusson, Nguyen Tien Son, András Csóré +4
We investigate the quenching of the photoluminescence (PL) from the divacancy defect in 4H-SiC consisting of a nearest-neighbour silicon and carbon vacancies. The quenching occurs…