81 citations · 189 across the 5 of their papers we have counts for
5 papers
Photoluminescence lineshapes and charge state control of divacancy qubits in silicon carbide
A. Csóré, I. G. Ivanov, N. T. Son +1
Divacancy in its neutral charge state (VV) in 4H silicon carbide (SiC) is a leading quantum bit (qubit) contender. Owing to the lattice structure of 4H SiC…
Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC
A. Csóré, N. T. Son, A. Gali
The negatively charged silicon vacancy [V] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V defect possesses…
{\textit{Ab initio} determination of pseudospin for paramagnetic defects in SiC
András Csóré, Adam Gali
Paramagnetic point defects in solids may exhibit a rich set of interesting and not yet fully resolved physics. In particular, character of wavefunctions and electron-phonon couplin…
Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology
L. Spindlberger, A. Csóré, G. Thiering +7
We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 \mum and 1…
Excitation properties of the divacancy in 4H-SiC
Björn Magnusson, Nguyen Tien Son, András Csóré +4
We investigate the quenching of the photoluminescence (PL) from the divacancy defect in 4H-SiC consisting of a nearest-neighbour silicon and carbon vacancies. The quenching occurs…