Photoluminescence lineshapes and charge state control of divacancy qubits in silicon carbide

A. Csóré, I. G. Ivanov, N. T. Son +1

Divacancy in its neutral charge state (V${}_{\text{C}}$V${}_{\text{Si}}^0$) in 4H silicon carbide (SiC) is a leading quantum bit (qubit) contender. Owing to the lattice structure of 4H SiC…