513 citations · 1.5k across the 12 of their papers we have counts for
12 papers
Ubiquitous Superconducting Diode Effect in Superconductor Thin Films
Yasen Hou, Fabrizio Nichele, Hang Chi +13
The macroscopic coherence in superconductors supports dissipationless supercurrents which could play a central role in emerging quantum technologies. Accomplishing unequal supercur…
A van der Waals Interface Hosting Two Groups of Magnetic Skyrmions
Yingying Wu, Brian Francisco, Wei Wang +9
Multiple magnetic skyrmion phases add an additional degree of freedom for skyrmion based ultrahigh-density spin memory devices. Extending the field to two-dimensional van der Waals…
Néel-type skyrmion in WTe2/Fe3GeTe2 van der Waals heterostructure
Yingying Wu, Senfu Zhang, Gen Yin +15
The promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrm…
Odd-integer quantum Hall states and giant spin susceptibility in p-type few-layer WSe2
Shuigang Xu, Junying Shen, Gen Long +17
We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predomi…
Probing the Electronic States in Black Phosphorus Vertical Heterostructures
Xiaolong Chen, Lin Wang, Yingying Wu +14
Atomically thin black phosphorus (BP) is a promising two-dimensional material for fabricating electronic and optoelectronic nano-devices with high mobility and tunable bandgap stru…
Band bending at interfaces between topological insulator Bi2Se3 and transition metals
Weiguang Ye, A. B. Pakhomov, Shuigang Xu +11
Interfaces between exfoliated topological insulator Bi2Se3 and several transition metals deposited by sputtering were studied by XPS, SIMS, UPS and contact I-V measurements. Chemic…
Observation of Valley Zeeman and Quantum Hall Effects at Q Valley of Few-Layer Transition Metal Disulfides
Zefei Wu, Shuigang Xu, Huanhuan Lu +10
In few-layer (FL) transition metal dichalcogenides (TMDC), the conduction bands along the Gamma-K directions shift downward energetically in the presence of interlayer interactions…
Negative Compressibility in Graphene-terminated Black Phosphorus Heterostructures
Yingying Wu, Xiaolong Chen, Zefei Wu +7
Negative compressibility generated by many-body effects in 2D electronic systems can enhance gate capacitance. We observe capacitance enhancement in a newly emerged 2D layered mate…
Fast Transfer-free Synthesis of High-quality Monolayer Graphene on Insulating Substrates by Simple Rapid Thermal Treatment
Zefei Wu, Yanqing Guo, Yuzheng Guo +13
The transfer-free synthesis of high-quality, large-area graphene on a given dielectric substrate, which is highly desirable for device applications, remains a significant challenge…
Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides
Shuigang Xu, Zefei Wu, Huanhuan Lu +14
Low carrier mobility and high electrical contact resistance are two major obstacles prohibiting explorations of quantum transport in TMDCs. Here, we demonstrate an effective method…
High quality sandwiched black phosphorus heterostructure and its quantum oscillations
Xiaolong Chen, Yingying Wu, Zefei Wu +8
Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides have attracted great attention because of the rich physics and potential applications in next-…
Detection of Interlayer Interaction in Few-layer Graphene through Landau Level Spectroscopy
Zefei Wu, Yu Han, Wei Zhu +12
We demonstrate that surface relaxation, which is insignificant in trilayer graphene, starts to manifest in Bernal-stacked tetralayer graphene. Bernal-stacked few-layer graphene has…