33 citations · 35 across the 4 of their papers we have counts for
4 papers
Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering
Guangnan Zhou, Fanming Zeng, Rongyu Gao +4
We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field a…
Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs
Guangnan Zhou, Yang Jiang, Gaiying Yang +5
We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing…
Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-gate-sweep Measurements
Guangnan Zhou, Fanming Zeng, Yang Jiang +5
In this work, we studied the gate breakdown mechanisms of p-GaN gate AlGaN/GaN HEMTs by a novel multiple-gate-sweep-based method. For the first time, three different breakdown mech…
Oxygen-based digital etching of AlGaN/GaN structures with AlN as etch-stop layers
Jingyi Wu, Siqi Lei, Wei-Chih Cheng +5
O2-plamsa-based digital etching of Al0.25Ga0.75N with a 0.8 nm AlN spacer on GaN was investigated. At 40 W RF bias power and 40 sccm oxygen flow, the etch depth of Al0.25Ga0.75N wa…