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20192021
most citedDetermination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-gate-sweep Measurements

33 citations · 35 across the 4 of their papers we have counts for

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cond-mat.mtrl-sci2021★ 1 cited

Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs

Guangnan Zhou, Yang Jiang, Gaiying Yang +5

We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing…