Oxygen-based digital etching of AlGaN/GaN structures with AlN as etch-stop layers

Jingyi Wu, Siqi Lei, Wei-Chih Cheng +5

O2-plamsa-based digital etching of Al0.25Ga0.75N with a 0.8 nm AlN spacer on GaN was investigated. At 40 W RF bias power and 40 sccm oxygen flow, the etch depth of Al0.25Ga0.75N wa…