33 citations · 35 across the 4 of their papers we have counts for
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physics.app-ph2021★ 1 cited
Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering
Guangnan Zhou, Fanming Zeng, Rongyu Gao +4
We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field a…
cond-mat.mtrl-sci2021★ 1 cited
Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs
Guangnan Zhou, Yang Jiang, Gaiying Yang +5
We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing…