32 citations · 74 across the 6 of their papers we have counts for
6 papers
Optomechanical cavities based on epitaxial GaP on nominally (001)-oriented Si
Paula Mouriño, Laura Mercadé, Miguel Sinusía Lozano +8
Gallium phosphide (GaP) has recently received considerable attention as a suitable material for building photonic integrated circuits due to its remarkable optical and piezoelectri…
Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy
Thomas Auzelle, Chiara Sinito, Jonas Lähnemann +5
We explore and systematically compare the morphological, structural and optical properties of GaN/(Al,Ga)N multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epi…
Electronic properties of air-exposed GaN and surfaces after several device processing compatible cleaning steps
Thomas Auzelle, Florian Ullrich, Sebastian Hietzschold +6
We report on the electronic properties of GaN and surfaces after three different and subsequent device processing compatible cleaning steps: HCl etching, ann…
Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy
David van Treeck, Sergio Fernández-Garrido, Lutz Geelhaar
In a combined experimental and theoretical study, we investigate the influence of the material source arrangement in a molecular beam epitaxy (MBE) system on the growth of nanowire…
Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process
Johannes K. Zettler, Pierre Corfdir, Lutz Geelhaar +3
We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires on Si(111) in plasma-assisted molecular beam epitaxy. We find that a tw…
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes
Mattia Musolino, Abbes Tahraoui, Sergio Fernández-Garrido +4
AlN layers with thicknesses between 2 and 14 nm were grown on Si(111) substrates by molecular beam epitaxy. The effect of the AlN layer thickness on the morphology and nucleation t…