activity
20142024
most citedCompatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

32 citations · 74 across the 6 of their papers we have counts for

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Showing 2019Show all

2 papers · 1 filter

physics.app-ph2019

Electronic properties of air-exposed GaN and surfaces after several device processing compatible cleaning steps

Thomas Auzelle, Florian Ullrich, Sebastian Hietzschold +6

We report on the electronic properties of GaN and surfaces after three different and subsequent device processing compatible cleaning steps: HCl etching, ann…

physics.app-ph2019★ 16 cited

Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy

David van Treeck, Sergio Fernández-Garrido, Lutz Geelhaar

In a combined experimental and theoretical study, we investigate the influence of the material source arrangement in a molecular beam epitaxy (MBE) system on the growth of nanowire…