72 citations · 230 across the 10 of their papers we have counts for
6 papers · 1 filter
Quantification of spin-charge interconversion in highly resistive sputtered BiSe with non-local spin valves
Isabel C. Arango, Won Young Choi, Van Tuong Pham +10
The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion ef…
Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices
Diogo C. Vaz, Chia-Ching Lin, John J. Plombon +20
As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potenti…
All-electrical spin-to-charge conversion in sputtered BiSe
Won Young Choi, Isabel C. Arango, Van Tuong Pham +14
One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find mate…
Spin Torque Generated by Valley Hall Effect in WSe2
D. J. P. de Sousa, M. J. Sammon, Raseong Kim +3
Monolayer transition metal dichalcogenides are promising materials for spintronics due to their robust spin-valley locked valence states, enabling efficient charge-to-spin conversi…
Physics-Based Models for Magneto-Electric Spin-Orbit Logic Circuits
Hai Li, Dmitri E. Nikonov, Chia-Ching Lin +5
Spintronic devices are a promising beyond-CMOS device option thanks to their energy efficiency and compatibility with CMOS. To accurately capture their multi-physics dynamics, a ri…
Spin-charge interconversion in KTaO two-dimensional electron gases
Luis M. Vicente-Arche, Julien Bréhin, Sara Varotto +22
Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symm…