14 citations · 24 across the 3 of their papers we have counts for
3 papers
physics.ins-det2019★ 6 cited
Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors
F. Ponce, W. Page, P. L. Brink +12
A model for charge trapping and impact ionization, and an experiment to measure these parameters is presented for the SuperCDMS HVeV detector. A procedure to isolate and quantify t…
physics.ins-det2019★ 14 cited
Measuring the Impact Ionization and Charge Trapping Probabilities in SuperCDMS HVeV Phonon Sensing Detectors
F. Ponce, W. Page, P. L. Brink +12
A 0.93 gram cm SuperCDMS silicon HVeV detector operated at 30 mK was illuminated by 1.91 eV photons using a room temperature pulsed laser coupled to the…
cond-mat.mtrl-sci2019★ 4 cited
High-field Spatial Imaging of Charge Transport in Silicon at Low Temperature
C. Stanford, R. A. Moffatt, N. A. Kurinsky +9
We present direct imaging measurements of charge transport across a 1 cm x 1 cm x 4 mm-thick crystal of high purity silicon (15 k-cm) at temperatures of 5 K and 500 mK. We…