Measuring the Impact Ionization and Charge Trapping Probabilities in SuperCDMS HVeV Phonon Sensing Detectors

Abstract

A 0.93 gram $1\times 1\times 0.4$ cm${}^3$ SuperCDMS silicon HVeV detector operated at 30 mK was illuminated by 1.91 eV photons using a room temperature pulsed laser coupled to the cryostat via fiber optic. The detector's response under a variety of specific operating conditions was used to study the detector leakage current, charge trapping and impact ionization in the high-purity Si substrate. The measured probabilities for a charge carrier in the detector to undergo charge trapping (0.713 $\pm$ 0.093%) or cause impact ionization (1.576 $\pm$ 0.110%) were found to be nearly independent of bias polarity and charge-carrier type (electron or hole) for substrate biases of $\pm$ 140 V.

arXiv comment4 pages, 4 figures

References in corpus (8)

• Direct Detection of Sub-GeV Dark Matter
• Dark Light, Dark Matter and the Misalignment Mechanism
• First Dark Matter Constraints from a SuperCDMS Single-Charge Sensitive Detector
• Single-electron and single-photon sensitivity with a silicon Skipper CCD
• Dark Sectors and New, Light, Weakly-Coupled Particles
• Dark Sectors 2016 Workshop: Community Report
• Thermal detection of single e-h pairs in a biased silicon crystal detector
• Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors

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• Improved Modelling of Detector Response Effects in Phonon-based Crystal Detectors used for Dark Matter Searches
• Two-Stage Cryogenic HEMT Based Amplifier For Low Temperature Detectors
• Search for low-mass electron-recoil dark matter using a single-charge sensitive SuperCDMS-HVeV Detector
• First Measurement of Correlated Charge Noise in Superconducting Qubits at an Underground Facility
• Performance of a SuperCDMS HVeV Detector with Sub-eV Energy Resolution and Single Charge-sensitivity