Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors

Abstract

A model for charge trapping and impact ionization, and an experiment to measure these parameters is presented for the SuperCDMS HVeV detector. A procedure to isolate and quantify the main sources of noise (bulk and surface charge leakage) in the measurements is also describe. This sets the stage to precisely measure the charge trapping and impact ionization probabilities in order to incorporate this model into future dark matter searches.

References in corpus (1)

• Single-electron and single-photon sensitivity with a silicon Skipper CCD

Cited by in corpus (4)

• Measuring the Impact Ionization and Charge Trapping Probabilities in SuperCDMS HVeV Phonon Sensing Detectors
• Improved Modelling of Detector Response Effects in Phonon-based Crystal Detectors used for Dark Matter Searches
• Performance of a SuperCDMS HVeV Detector with Sub-eV Energy Resolution and Single Charge-sensitivity
• Phonon and charge signals from IR and X excitation in the SELENDIS Ge cryogenic detector