High-field Spatial Imaging of Charge Transport in Silicon at Low Temperature

Abstract

We present direct imaging measurements of charge transport across a 1 cm x 1 cm x 4 mm-thick crystal of high purity silicon ($\sim$15 k$\Omega$-cm) at temperatures of 5 K and 500 mK. We use these data to measure the lateral diffusion of electrons and holes as a function of the electric field applied along the [111] crystal axis, and to verify our low-temperature Monte Carlo software. The range of field strengths in this paper exceed those used in the previous study (DOI: 10.1063/1.5049691) by a factor of 10, and now encompasses the region in which some recent silicon dark matter detectors operate (DOI: 10.1103/PhysRevLett.121.051301). We also report on a phenomenon of surface charge trapping which can reduce expected charge collection.

References in corpus (5)

• First Dark Matter Constraints from a SuperCDMS Single-Charge Sensitive Detector
• Single-electron and single-photon sensitivity with a silicon Skipper CCD
• SENSEI: Direct-Detection Constraints on Sub-GeV Dark Matter from a Shallow Underground Run Using a Prototype Skipper-CCD
• Thermal detection of single e-h pairs in a biased silicon crystal detector
• Spatial Imaging of Charge Transport in Silicon at Low Temperature

Cited by in corpus (3)

• Constraints on low-mass, relic dark matter candidates from a surface-operated SuperCDMS single-charge sensitive detector
• SiC Detectors for Sub-GeV Dark Matter
• Photoelectric absorption cross section of silicon near the band gap from room temperature to sub-Kelvin temperature