3 papers
cond-mat.mtrl-sci2024
Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment
Christoph Wilflingseder, Johannes Aberl, Enrique Prado Navarette +11
Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport…
cond-mat.mes-hall2020
Intersubband transition engineering in the conduction band of asymmetric coupled Ge/SiGe quantum wells
Luca Persichetti, Michele Montanari, Chiara Ciano +9
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based TH…
cond-mat.mes-hall2018
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells
M. Montanari, M. Virgilio, C. L. Manganelli +11
In this paper we investigate the structural and optical properties of few strain-unbalanced multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded substrates…