18 citations · 63 across the 10 of their papers we have counts for
10 papers
Mobility Enhancement in Si/SiGe Quantum Well Enabled by a Buried Si Layer Trapping Oxygen Impurities
Felix Reichmann, Alberto Mistroni, Fabian Fidorra +4
Reducing disorder in undoped Si/SiGe field-effect heterostructures remains an important materials challenge for scalable quantum devices, particularly electron spin qubits. Backgro…
Disorder signatures emerging at millikelvin temperatures in Si/SiGe field-effect stacks
Lino Visser, Alberto Mistroni, Yuji Yamamoto +9
The performance and scalability of electron spin qubits based on gate-defined quantum-dots in undoped Si/SiGe field-effect stacks remain constrained by disorder originating from th…
Brittle-to-ductile transition and strain relaxation in SiGe linearly graded buffers
Riccardo Civiero, Elena Campagna, Afonso Cerdeira Oliveira +5
The strain-relaxation mechanism of a set of SiGe linearly graded buffers (LGBs), grown following different temperature profiles, has been investigated by means of d…
High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line
Alberto Mistroni, Marco Lisker, Yuji Yamamoto +13
The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devic…
Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment
Christoph Wilflingseder, Johannes Aberl, Enrique Prado Navarette +11
Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport…
Thermal expansion and temperature dependence of Raman modes in epitaxial layers of Ge and GeSn
Agnieszka Anna Corley-Wiciak, Diana Ryzhak, Marvin Hartwig Zoellner +7
Temperature dependence of vibrational modes in semiconductors depends on lattice thermal expansion and anharmonic phonon-phonon scattering. Evaluating the two contributions from ex…
Local Alloy Order in a Ge1-xSnx/Ge Epitaxial Layer
Agnieszka Anna Corley-Wiciak, Shunda Chen, Omar Concepción +6
The local ordering of atoms in alloys directly has a strong impact on their electronic and optical properties. This is particularly relevant in nonrandom alloys, especially if they…
Lattice deformation at the sub-micron scale: X-ray nanobeam measurements of elastic strain in electron shuttling devices
C. Corley-Wiciak, M. H. Zoellner, I. Zaitsev +11
The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate the deformatio…
Intersubband transition engineering in the conduction band of asymmetric coupled Ge/SiGe quantum wells
Luca Persichetti, Michele Montanari, Chiara Ciano +9
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based TH…
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells
M. Montanari, M. Virgilio, C. L. Manganelli +11
In this paper we investigate the structural and optical properties of few strain-unbalanced multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded substrates…