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cond-mat.mtrl-sci2024
Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment
Christoph Wilflingseder, Johannes Aberl, Enrique Prado Navarette +11
Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport…
cond-mat.mtrl-sci2024★ 5 cited
Thermal expansion and temperature dependence of Raman modes in epitaxial layers of Ge and GeSn
Agnieszka Anna Corley-Wiciak, Diana Ryzhak, Marvin Hartwig Zoellner +7
Temperature dependence of vibrational modes in semiconductors depends on lattice thermal expansion and anharmonic phonon-phonon scattering. Evaluating the two contributions from ex…