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cond-mat.mtrl-sci2025
Brittle-to-ductile transition and strain relaxation in SiGe linearly graded buffers
Riccardo Civiero, Elena Campagna, Afonso Cerdeira Oliveira +5
The strain-relaxation mechanism of a set of SiGe linearly graded buffers (LGBs), grown following different temperature profiles, has been investigated by means of d…
cond-mat.mes-hall2025★ 1 cited
High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line
Alberto Mistroni, Marco Lisker, Yuji Yamamoto +13
The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devic…