18 citations · 63 across the 10 of their papers we have counts for
5 papers · 1 filter
Brittle-to-ductile transition and strain relaxation in SiGe linearly graded buffers
Riccardo Civiero, Elena Campagna, Afonso Cerdeira Oliveira +5
The strain-relaxation mechanism of a set of SiGe linearly graded buffers (LGBs), grown following different temperature profiles, has been investigated by means of d…
Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment
Christoph Wilflingseder, Johannes Aberl, Enrique Prado Navarette +11
Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport…
Thermal expansion and temperature dependence of Raman modes in epitaxial layers of Ge and GeSn
Agnieszka Anna Corley-Wiciak, Diana Ryzhak, Marvin Hartwig Zoellner +7
Temperature dependence of vibrational modes in semiconductors depends on lattice thermal expansion and anharmonic phonon-phonon scattering. Evaluating the two contributions from ex…
Local Alloy Order in a Ge1-xSnx/Ge Epitaxial Layer
Agnieszka Anna Corley-Wiciak, Shunda Chen, Omar Concepción +6
The local ordering of atoms in alloys directly has a strong impact on their electronic and optical properties. This is particularly relevant in nonrandom alloys, especially if they…
Lattice deformation at the sub-micron scale: X-ray nanobeam measurements of elastic strain in electron shuttling devices
C. Corley-Wiciak, M. H. Zoellner, I. Zaitsev +11
The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate the deformatio…