94 citations · 289 across the 26 of their papers we have counts for
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Sub-Micron Gate FinFETs with Current Density 750 mA/mm and Ion/Ioff Ratio
Nabasindhu Das, Cameron Gorsak, Pushpanshu Tripathi +7
In this work, we demonstrate submicron-gate FinFETs that integrate Si delta-doped channels with selectively regrown n++ source/drain contacts. The devices employ 10…
High-Field Electron Transport in AlGaN alloys: A Full-Band Monte Carlo Study Based on Ab Initio Supercell Calculations
Animesh Datta, Matinehsadat Hosseinigheidari, Uttam Singisetti
AlGaN alloys are promising wide and ultra-wide-bandgap semiconductors for next-generation power and RF electronics applications. To realize the full potential of AlGaN based device…
Enhancement-Mode Vertical -GaO U-Trench MOSFET with MOCVD Regrown n Contact Layers and Nitrogen-Implanted Current Blocking Layer
Walid Amir, Jiawei Liu, Surajit Chakraborty +4
In this work, an implantation-free ohmic contact technology based on selectively MOCVD-regrown Si-doped n layers is demonstrated for enhancement-mode vertical -GaO U…
Beta-AlGaO/Ga2O3 Tri-Gate MOSHEMT with 70GHz fT and 55GHz fmax
Noor Jahan Nipu, Chinmoy Nath Saha, Uttam Singisetti
We report Beta-AlGaO/Ga2O3 tri-gate heterostructure MOSHEMTs incorporating a thin 5 nm Al2O3 gate oxide layer for improved gate control and reduced leakage. The devices were fabric…