U. Singisetti

activity

20132026

most citedElectron Mobility in Monoclinic β-Ga2O3 - Effect of Plasmon-phonon Coupling, Anisotropy, and Confinement

94 citations · 289 across the 26 of their papers we have counts for

collaborators

Showing 2025Show all

2 papers · 1 filter

physics.app-ph2025

Neutron-Assisted Breakdown Enhancement in $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes

Saleh Ahmed Khan, Sudipto Saha, Ahmed Ibreljic +6

This study demonstrates a substantial enhancement of breakdown voltage in $β$ -Ga $_{2}$ O $_{3}$ Schottky diodes through an approach that combines fast neutron irradiation with controlled…

cond-mat.mtrl-sci2025★ 1 cited

High performance vacuum annealed beta-(AlxGa1-x)2O3/Ga2O3 HFET with f_T/f_MAX of 32/65 GHz

Chinmoy Nath Saha, Noor Jahan Nipu, Uttam Singisetti

This letter reports high performance beta-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) with improved regrowth process. Highly scaled I shaped gate have been fabricated with degen…

Neutron-Assisted Breakdown Enhancement in β-Ga2​O3​ Schottky Diodes

High performance vacuum annealed beta-(AlxGa1-x)2O3/Ga2O3 HFET with f_T/f_MAX of 32/65 GHz

Neutron-Assisted Breakdown Enhancement in $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes