U. Singisetti

activity

20132026

most citedElectron Mobility in Monoclinic β-Ga2O3 - Effect of Plasmon-phonon Coupling, Anisotropy, and Confinement

94 citations · 289 across the 26 of their papers we have counts for

collaborators

Showing 2022Show all

4 papers · 1 filter

cond-mat.mtrl-sci2022★ 1 cited

Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field

Chinmoy Nath Saha, Abhishek Vaidya, A F M Anhar Uddin Bhuiyan +3

This letter reports high-performance $\mathrmβ Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-20…

cond-mat.mtrl-sci2022

Effective Electronic Structure of Monoclinic $β - (A l_{x} G a_{1 - x})_{2} O_{3}$ alloy semiconductor

Ankit Sharma, Uttam Singisetti

In this article, the electronic band structure $β - (A l_{x} G a_{1 - x})_{2} O_{3}$ alloy system is calculated with $β - G a_{2} O_{3}$ as the bulk crystal. The technique of band unfolding is implement…

cond-mat.mtrl-sci2022★ 2 cited

Full-band Monte Carlo simulation of two-dimensional electron gas in (Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ /Ga $_{2}$ O $_{3}$ heterostructures

Avinash Kumar, Uttam Singisetti

$β$ -Gallium Oxide (Ga $_{2}$ O $_{3}$ ) is an extensively investigated ultrawide-bandgap semiconductor for potential applications in power electronics and RF switching. The room temper…

physics.app-ph2022★ 68 cited

4.4 kV $β$ -Ga $_{2}$ O $_{3}$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^{2}$

Arkka Bhattacharyya, Shivam Sharma, Fikadu Alema +7

Field-plated (FP) depletion-mode MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN $_{x}$ dielectric…

Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field

Effective Electronic Structure of Monoclinic β−(Alx​Ga1−x​)2​O3​ alloy semiconductor

Full-band Monte Carlo simulation of two-dimensional electron gas in (Alx​Ga1−x​)2​O3​/Ga2​O3​ heterostructures

4.4 kV β-Ga2​O3​ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm2

Effective Electronic Structure of Monoclinic $β - (A l_{x} G a_{1 - x})_{2} O_{3}$ alloy semiconductor

Full-band Monte Carlo simulation of two-dimensional electron gas in (Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ /Ga $_{2}$ O $_{3}$ heterostructures

4.4 kV $β$ -Ga $_{2}$ O $_{3}$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^{2}$