239 citations · 1.2k across the 12 of their papers we have counts for
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cond-mat.mtrl-sci2016★ 20 cited
On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers
B. Shojaei, A. C. C. Drachmann, M. Pendharkar +7
The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect densit…
cond-mat.mes-hall2016★ 17 cited
InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers
M. Taupin, E. Mannila, P. Krogstrup +6
We report on fabrication of single-electron transistors using InAs nanowires with epitaxial aluminium with fixed tunnel barriers made of aluminium oxide. The devices exhibit a hard…