182 citations · 593 across the 20 of their papers we have counts for
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Gain Recovery in Heavily Irradiated Low Gain Avalanche Detectors by High Temperature Annealing
I. Mandić, V. Cindro, A. Gorišek +7
Studies of annealing at temperatures up to 450C with LGADs irradiated with neutrons are described. It was found that the performance of LGADs irradiated with 1.5e15 n/cm$^2…
Tuning of gain layer doping concentration and Carbon implantation effect on deep gain layer
S. M. Mazza, C. Gee, Y. Zhao +24
Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutro…
Study of neutron irradiation effects in Depleted CMOS detector structures
I. Mandić, V. Cindro, J. Debevc +12
In this paper results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivitie…
Characterisation of analogue front end and time walk in CMOS active pixel sensor
B. Hiti, V. Cindro, A. Gorišek +10
In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investiga…
Inter-pad dead regions of irradiated FBK Low Gain Avalanche Detectors
B. Darby, S. M. Mazza, F. McKinney-Martinez +22
Low Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer. LGADs manufactured by Fondazione Bruno Kessler (FBK) were tested before and…
Measurements with silicon detectors at extreme neutron fluences
I. Mandić, V. Cindro, A. Gorišek +7
Thin pad detectors made from 75 m thick epitaxial silicon on low resistivity substrate were irradiated with reactor neutrons to fluences from 2.5 n/cm to 1$\…
Annealing effects on operation of thin Low Gain Avalanche Detectors
G. Kramberger. V. Cindro, A. Howard, Z. Kljun +2
Several thin Low Gain Avalanche Detectors from Hamamatsu Photonics were irradiated with neutrons to different equivalent fluences up to cm. After the…
Radiation Campaign of HPK Prototype LGAD sensors for the High-Granularity Timing Detector (HGTD)
X. Shi, M. K. Ayoub, J. Barreiro Guimarães da Costa +74
We report on the results of a radiation campaign with neutrons and protons of Low Gain Avalanche Detectors (LGAD) produced by Hamamatsu (HPK) as prototypes for the High-Granularity…
Effect of deep gain layer and Carbon infusion on LGAD radiation hardness
R Padilla, C. Labitan, Z. Galloway +22
The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after ir…
Layout and Performance of HPK Prototype LGAD Sensors for the High-Granularity Timing Detector
X. Yang, S. Alderweireldt, N. Atanov +76
The High-Granularity Timing Detector is a detector proposed for the ATLAS Phase II upgrade. The detector, based on the Low-Gain Avalanche Detector (LGAD) technology will cover the…
Experimental Study of Acceptor Removal in UFSD
Y. Jin, H. Ren, S. Christie +25
The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the juncti…
Determination of the electric field in highly-irradiated silicon sensors using edge-TCT measurements
R. Klanner, G. Kramberger, I. Mandic +3
A method is presented which allows to obtain the position-dependent electric field and charge density by fits to velocity profiles from edge-TCT data from silicon strip-detectors.…
Mini-MALTA: Radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC
M. Dyndal, V. Dao, P. Allport +41
Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at…
Three-dimensional charge transport mapping by two-photon absorption edge transient-current technique in synthetic single-crystalline diamond
C. Dorfer, D. Hits, L. Kasmi +4
We demonstrate the application of two-photon absorption transient current technique to wide bandgap semiconductors. We utilize it to probe charge transport properties of single-cry…
Proprieties of FBK UFSDs after neutron and proton irradiation up to 6*10e15 neq/cm2
S. M. Mazza, E. Estrada, Z. Galloway +24
The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation…
Comparison of 35 and 50 μm thin HPK UFSD after neutron irradiation up to 6*10^15 neq/cm^2
Y. Zhao, N. Cartiglia, E. Estrada +13
We report results from the testing of 35 μm thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data re…
Radiation Hardness of Thin Low Gain Avalanche Detectors
G. Kramberger, M. Carulla, E. Cavallaro +18
Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impa…
Beam test results of a 16 ps timing system based on ultra-fast silicon detectors
N. Cartiglia, A. Staiano, V. Sola +40
In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 Ge…