Mini-MALTA: Radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC

Abstract

Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $\mu$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $\mu$m), and are produced on high resistivity epitaxial p-type silicon. The design targets a radiation hardness of $1\times 10^{15}$ 1 MeV n${}_{eq}$/cm${}^2$, compatible with the outermost layer of the ATLAS ITK Pixel detector. This paper presents the results from characterization in particle beam tests of the Mini-MALTA prototype that implements a mask change or an additional implant to address the inefficiencies on the pixel edges. Results show full efficiency after a dose of $1\times 10^{15}$ 1 MeV n${}_{eq}$/cm${}^2$.

References in corpus (4)

• General Broken Lines as advanced track fitting method
• Simulations of CMOS pixel sensors with a small collection electrode, improved for a faster charge collection and increased radiation tolerance
• Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade
• The Monopix chips: Depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade

Cited by in corpus (14)

• DMAPS Monopix developments in large and small electrode designs
• MALTA-Cz: A radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate
• Performance of the MALTA Telescope
• Performance in beam tests of Carbon-enriched irradiated Low Gain Avalanche Detectors for the ATLAS High Granularity Timing Detector
• Timing performance of radiation hard MALTA monolithic Pixel sensors
• Measurement of the relative response of TowerJazz Mini-MALTA CMOS prototypes at Diamond Light Source
• Study of neutron irradiation effects in Depleted CMOS detector structures
• Characterisation of analogue front end and time walk in CMOS active pixel sensor
• Test-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurement
• Charge collection properties of TowerJazz 180 nm CMOS Pixel Sensors in dependence of pixel geometries and bias parameters, studied using a dedicated test-vehicle: the Investigator chip
• Recent results with radiation-tolerant TowerJazz 180 nm MALTA Sensors
• Development of novel low-mass module concepts based on MALTA monolithic pixel sensors
• Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD
• A Data-Driven Fast Simulation Approach for MAPS-based Detectors and their Optimization