Simulations of CMOS pixel sensors with a small collection electrode, improved for a faster charge collection and increased radiation tolerance

Abstract

CMOS pixel sensors with a small collection electrode combine the advantages of a small sensor capacitance with the advantages of a fully monolithic design. The small sensor capacitance results in a large ratio of signal-to-noise and a low analogue power consumption, while the monolithic design reduces the material budget, cost and production effort. However, the low electric field in the pixel corners of such sensors results in an increased charge collection time, that makes a fully efficient operation after irradiation and a timing resolution in the order of nanoseconds challenging for pixel sizes larger than approximately forty micrometers. This paper presents the development of concepts of CMOS sensors with a small collection electrode to overcome these limitations, using three-dimensional Technology Computer Aided Design simulations. The studied design uses a 0.18 micrometer process implemented on a high-resistivity epitaxial layer.

arXiv commentProceedings of the PIXEL 2018 Workshop

References in corpus (2)

• Updated baseline for a staged Compact Linear Collider
• Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations

Cited by in corpus (22)

• Mini-MALTA: Radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC
• DMAPS Monopix developments in large and small electrode designs
• MALTA-Cz: A radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate
• Performance of the MALTA Telescope
• Transient Monte Carlo Simulations for the Optimisation and Characterisation of Monolithic Silicon Sensors
• Timing performance of radiation hard MALTA monolithic Pixel sensors
• Simulating Monolithic Active Pixel Sensors: A Technology-Independent Approach Using Generic Doping Profiles
• Measurement of the relative response of TowerJazz Mini-MALTA CMOS prototypes at Diamond Light Source
• The Tangerine project: Development of high-resolution 65 nm silicon MAPS
• Silicon Pixel R&D for the CLIC Tracking Detector
• Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process
• Towards a New Generation of Monolithic Active Pixel Sensors
• Simulations and Performance Studies of a MAPS in 65 nm CMOS Imaging Technology
• Test-beam Performance Results of the FASTPIX Sub-Nanosecond CMOS Pixel Sensor Demonstrator
• Test-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurement
• Characterisation of analogue MAPS fabricated in 65 nm technology for the ALICE ITS3
• Charge collection properties of TowerJazz 180 nm CMOS Pixel Sensors in dependence of pixel geometries and bias parameters, studied using a dedicated test-vehicle: the Investigator chip
• Charge collection parameterization of MALTA2, a depleted monolithic active pixel sensor
• Recent results with radiation-tolerant TowerJazz 180 nm MALTA Sensors
• Test-beam and simulation studies for the CLICTD technology demonstrator -- a monolithic CMOS pixel sensor with a small collection diode
• A Data-Driven Fast Simulation Approach for MAPS-based Detectors and their Optimization
• Review of prototypes developed in a 65 nm CMOS imaging technology in view of vertexing applications at a future lepton collider