A. Baczewski

activity

20202025

most citedUtilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability

25 citations · 85 across the 10 of their papers we have counts for

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Showing 2025 · cond-mat.mtrl-sciShow all

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cond-mat.mtrl-sci2025★ 1 cited

First principles band structure of interacting phosphorus and boron/aluminum $δ$ -doped layers in silicon

Quinn T. Campbell, Andrew D. Baczewski, Shashank Misra +1

Silicon can be heavily doped with phosphorus in a single atomic layer (a $δ$ layer), significantly altering the electronic structure of the conduction bands within the material. Re…

First principles band structure of interacting phosphorus and boron/aluminum δ-doped layers in silicon

First principles band structure of interacting phosphorus and boron/aluminum $δ$ -doped layers in silicon