A. Baczewski

activity

20202025

most citedUtilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability

25 citations · 85 across the 10 of their papers we have counts for

collaborators

Showing cond-mat.mtrl-sciShow all

6 papers · 1 filter

cond-mat.mtrl-sci2025★ 1 cited

First principles band structure of interacting phosphorus and boron/aluminum $δ$ -doped layers in silicon

Quinn T. Campbell, Andrew D. Baczewski, Shashank Misra +1

Silicon can be heavily doped with phosphorus in a single atomic layer (a $δ$ layer), significantly altering the electronic structure of the conduction bands within the material. Re…

cond-mat.mtrl-sci2023★ 25 cited

Utilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability

Luis Fabián Peña, Justine C. Koepke, J. Houston Dycus +4

SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle…

cond-mat.mtrl-sci2022★ 4 cited

Reaction pathways of BCl $_{3}$ for acceptor delta-doping of silicon

Quinn Campbell, Kevin J. Dwyer, Sungha Baek +3

BCl $_{3}$ is a promising candidate for atomic-precision acceptor doping in Si, but optimizing the electrical properties of structures created with this technique requires a detailed…

cond-mat.mtrl-sci2021★ 21 cited

AlCl $_{3}$ -dosed Si(100)-2 $\times$ 1: Adsorbates, chlorinated Al chains, and incorporated Al

Matthew S. Radue, Sungha Baek, Azadeh Farzaneh +8

The adsorption of AlCl $_{3}$ on Si(100) and the effect of annealing the AlCl $_{3}$ -dosed substrate was studied to reveal key surface processes for the development of atomic-precisi…

cond-mat.mtrl-sci2020

A model for atomic precision p-type doping with diborane on Si(100)-2 $\times$ 1

Quinn Campbell, Jeffrey A. Ivie, Ezra Bussmann +3

Diborane (B $_{2}$ H $_{6}$ ) is a promising molecular precursor for atomic precision p-type doping of silicon that has recently been experimentally demonstrated [T. {Š}kere{ň}, \textit{et…

cond-mat.mtrl-sci2020★ 9 cited

Low Thermal Budget High-k/Metal Surface Gate for Buried Donor-Based Devices

Evan M. Anderson, DeAnna M. Campbell, Leon N. Maurer +8

Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics.…

First principles band structure of interacting phosphorus and boron/aluminum δ-doped layers in silicon

Utilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability

Reaction pathways of BCl3​ for acceptor delta-doping of silicon

AlCl3​-dosed Si(100)-2×1: Adsorbates, chlorinated Al chains, and incorporated Al

A model for atomic precision p-type doping with diborane on Si(100)-2×1

Low Thermal Budget High-k/Metal Surface Gate for Buried Donor-Based Devices

First principles band structure of interacting phosphorus and boron/aluminum $δ$ -doped layers in silicon

Reaction pathways of BCl $_{3}$ for acceptor delta-doping of silicon

AlCl $_{3}$ -dosed Si(100)-2 $\times$ 1: Adsorbates, chlorinated Al chains, and incorporated Al

A model for atomic precision p-type doping with diborane on Si(100)-2 $\times$ 1