25 citations · 85 across the 10 of their papers we have counts for
10 papers
First principles band structure of interacting phosphorus and boron/aluminum -doped layers in silicon
Quinn T. Campbell, Andrew D. Baczewski, Shashank Misra +1
Silicon can be heavily doped with phosphorus in a single atomic layer (a layer), significantly altering the electronic structure of the conduction bands within the material. Re…
Utilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability
Luis Fabián Peña, Justine C. Koepke, J. Houston Dycus +4
SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle…
Quantum-Inspired Tempering for Ground State Approximation using Artificial Neural Networks
Tameem Albash, Conor Smith, Quinn Campbell +1
A large body of work has demonstrated that parameterized artificial neural networks (ANNs) can efficiently describe ground states of numerous interesting quantum many-body Hamilton…
Robust incorporation in multi-donor patches created using atomic-precision advanced manufacturing
Quinn Campbell, Justine C. Koepke, Jeffrey A. Ivie +6
Atomic-precision advanced manufacturing enables the placement of dopant atoms within 1 lattice site in crystalline Si. However, it has recently been shown that reaction kineti…
Reaction pathways of BCl for acceptor delta-doping of silicon
Quinn Campbell, Kevin J. Dwyer, Sungha Baek +3
BCl is a promising candidate for atomic-precision acceptor doping in Si, but optimizing the electrical properties of structures created with this technique requires a detailed…
Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-21
Quinn Campbell, Andrew D. Baczewski, R. E. Butera +1
Stochastic incorporation kinetics can be a limiting factor in the scalability of semiconductor fabrication technologies using atomic-precision techniques. While these technologies…
AlCl-dosed Si(100)-21: Adsorbates, chlorinated Al chains, and incorporated Al
Matthew S. Radue, Sungha Baek, Azadeh Farzaneh +8
The adsorption of AlCl on Si(100) and the effect of annealing the AlCl-dosed substrate was studied to reveal key surface processes for the development of atomic-precisi…
A model for atomic precision p-type doping with diborane on Si(100)-21
Quinn Campbell, Jeffrey A. Ivie, Ezra Bussmann +3
Diborane (BH) is a promising molecular precursor for atomic precision p-type doping of silicon that has recently been experimentally demonstrated [T. {Š}kere{ň}, \textit{et…
Atomic Precision Advanced Manufacturing for Digital Electronics
Daniel R. Ward, Scott W. Schmucker, Evan M. Anderson +8
An exponential increase in the performance of silicon microelectronics and the demand to manufacture in great volumes has created an ecosystem that requires increasingly complex to…
Low Thermal Budget High-k/Metal Surface Gate for Buried Donor-Based Devices
Evan M. Anderson, DeAnna M. Campbell, Leon N. Maurer +8
Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics.…