34 citations · 174 across the 21 of their papers we have counts for
21 papers
First principles band structure of interacting phosphorus and boron/aluminum -doped layers in silicon
Quinn T. Campbell, Andrew D. Baczewski, Shashank Misra +1
Silicon can be heavily doped with phosphorus in a single atomic layer (a layer), significantly altering the electronic structure of the conduction bands within the material. Re…
First-principles dissociation pathways of BCl on the Si(100)-21 surface
Quinn T. Campbell, Shashank Misra, Jeffrey A. Ivie
One of the most promising acceptor precursors for atomic-precision -doping of silicon is BCl. The chemical pathway, and the resulting kinetics, through which BCl adsorbs…
Roadmap on Atomic-scale Semiconductor Devices
Steven R. Schofield, Andrew J. Fisher, Eran Ginossar +47
Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing techno…
Direct measurement of 2DEG states in shallow Si:Sb -layers
Frode S. Strand, Simon P. Cooil, Quinn T. Campbell +13
We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb -layers. We show that, in spite of the known challenges in produc…
Optimizing Temperature Distributions for Training Neural Quantum States using Parallel Tempering
Conor Smith, Quinn T. Campbell, Tameem Albash
Parameterized artificial neural networks (ANNs) can be very expressive ansatzes for variational algorithms, reaching state-of-the-art energies on many quantum many-body Hamiltonian…
Voltage dependent first-principles barriers to Li transport within Li ion battery Solid Electrolyte Interphases
Quinn T. Campbell
Charging a Li ion battery requires Li ion transport between the cathode and the anode. This Li ion transport is dependent upon (among other factors) the electrostatic environment t…
Electronic structure of boron and aluminum -doped layers in silicon
Quinn T. Campbell, Shashank Misra, Andrew D. Baczewski
Recent work on atomic-precision dopant incorporation technologies has led to the creation of both boron and aluminum -doped layers in silicon with densities above the solid solu…
Ternary oxides of - and -block metals for photocatalytic solar-to-hydrogen conversion
Simon Gelin, Nicole E. Kirchner-Hall, Rowan R. Katzbaer +13
Oxides containing metals or metalloids from the {\it p}-block of the periodic table ({\it e.g.}, In, Sn, Sb, Pb, Bi) are of technological interest as transparent conductors and lig…
Voltage-dependent first-principles simulation of insertion of chloride ions into Al/AlO interfaces using the Quantum Continuum Approximation
Quinn Campbell
Experiments have shown that pitting corrosion can develop in aluminum surfaces at potentials V relative to the standard hydrogen electrode (SHE). Until recently, the onset…
Quantum-Inspired Tempering for Ground State Approximation using Artificial Neural Networks
Tameem Albash, Conor Smith, Quinn Campbell +1
A large body of work has demonstrated that parameterized artificial neural networks (ANNs) can efficiently describe ground states of numerous interesting quantum many-body Hamilton…
Robust incorporation in multi-donor patches created using atomic-precision advanced manufacturing
Quinn Campbell, Justine C. Koepke, Jeffrey A. Ivie +6
Atomic-precision advanced manufacturing enables the placement of dopant atoms within 1 lattice site in crystalline Si. However, it has recently been shown that reaction kineti…
Reaction pathways of BCl for acceptor delta-doping of silicon
Quinn Campbell, Kevin J. Dwyer, Sungha Baek +3
BCl is a promising candidate for atomic-precision acceptor doping in Si, but optimizing the electrical properties of structures created with this technique requires a detailed…
Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-21
Quinn Campbell, Andrew D. Baczewski, R. E. Butera +1
Stochastic incorporation kinetics can be a limiting factor in the scalability of semiconductor fabrication technologies using atomic-precision techniques. While these technologies…
The impact of stochastic incorporation on atomic-precision Si:P arrays
Jeffrey A. Ivie, Quinn Campbell, Justin C. Koepke +9
Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within 1 nm of a target…
Optimizing accuracy and efficacy in data-driven materials discovery for the solar production of hydrogen
Yihuang Xiong, Quinn T. Campbell, Julian Fanghanel +25
The production of hydrogen fuels, via water splitting, is of practical relevance for meeting global energy needs and mitigating the environmental consequences of fossil-fuel-based…
AlCl-dosed Si(100)-21: Adsorbates, chlorinated Al chains, and incorporated Al
Matthew S. Radue, Sungha Baek, Azadeh Farzaneh +8
The adsorption of AlCl on Si(100) and the effect of annealing the AlCl-dosed substrate was studied to reveal key surface processes for the development of atomic-precisi…
A model for atomic precision p-type doping with diborane on Si(100)-21
Quinn Campbell, Jeffrey A. Ivie, Ezra Bussmann +3
Diborane (BH) is a promising molecular precursor for atomic precision p-type doping of silicon that has recently been experimentally demonstrated [T. {Š}kere{ň}, \textit{et…
Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions
Shruti Subramanian, Quinn T. Campbell, Simon Moser +18
Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interfa…
Voltage-dependent reconstruction of layered BiWO and BiMoO photocatalysts and its influence on charge separation for water splitting
Quinn Campbell, Daniel Fisher, Ismaila Dabo
We study the surface stability of the layered bismuth-oxide BiWO and BiMoO photocatalysts, which belong to the series of Aurivillius (BiABO$_{3n+3…
Electrochemical stability and light-harvesting ability of silicon photoelectrodes in aqueous environments
Quinn Campbell, Ismaila Dabo
We consider the factors that affect the photoactivity of silicon electrodes for the water-splitting reaction using a self-consistent continuum solvation (SCCS) model of the solid-l…
Quantum-continuum calculation of the surface states and electrical response of silicon in solution
Quinn Campbell, Ismaila Dabo
A wide range of electrochemical reactions of practical importance occur at the interface between a semiconductor and an electrolyte. We present an embedded density-functional theor…