4 citations · 6 across the 5 of their papers we have counts for
10 papers · 1 filter
First principles band structure of interacting phosphorus and boron/aluminum -doped layers in silicon
Quinn T. Campbell, Andrew D. Baczewski, Shashank Misra +1
Silicon can be heavily doped with phosphorus in a single atomic layer (a layer), significantly altering the electronic structure of the conduction bands within the material. Re…
First-principles dissociation pathways of BCl on the Si(100)-21 surface
Quinn T. Campbell, Shashank Misra, Jeffrey A. Ivie
One of the most promising acceptor precursors for atomic-precision -doping of silicon is BCl. The chemical pathway, and the resulting kinetics, through which BCl adsorbs…
Direct measurement of 2DEG states in shallow Si:Sb -layers
Frode S. Strand, Simon P. Cooil, Quinn T. Campbell +13
We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb -layers. We show that, in spite of the known challenges in produc…
Voltage dependent first-principles barriers to Li transport within Li ion battery Solid Electrolyte Interphases
Quinn T. Campbell
Charging a Li ion battery requires Li ion transport between the cathode and the anode. This Li ion transport is dependent upon (among other factors) the electrostatic environment t…
Electronic structure of boron and aluminum -doped layers in silicon
Quinn T. Campbell, Shashank Misra, Andrew D. Baczewski
Recent work on atomic-precision dopant incorporation technologies has led to the creation of both boron and aluminum -doped layers in silicon with densities above the solid solu…
Reaction pathways of BCl for acceptor delta-doping of silicon
Quinn Campbell, Kevin J. Dwyer, Sungha Baek +3
BCl is a promising candidate for atomic-precision acceptor doping in Si, but optimizing the electrical properties of structures created with this technique requires a detailed…