34 citations · 174 across the 21 of their papers we have counts for
3 papers · 1 filter
First principles band structure of interacting phosphorus and boron/aluminum -doped layers in silicon
Quinn T. Campbell, Andrew D. Baczewski, Shashank Misra +1
Silicon can be heavily doped with phosphorus in a single atomic layer (a layer), significantly altering the electronic structure of the conduction bands within the material. Re…
First-principles dissociation pathways of BCl on the Si(100)-21 surface
Quinn T. Campbell, Shashank Misra, Jeffrey A. Ivie
One of the most promising acceptor precursors for atomic-precision -doping of silicon is BCl. The chemical pathway, and the resulting kinetics, through which BCl adsorbs…
Roadmap on Atomic-scale Semiconductor Devices
Steven R. Schofield, Andrew J. Fisher, Eran Ginossar +47
Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing techno…