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researcher

A. Pacheco-Sánchez

23 papers hereh-index 11392 citations76 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author7
  • middle author14
  • last author2

Across the 23 of 23 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall13
  • physics.app-ph10

identity via Semantic Scholar / OpenAlex

activity
20202025
most citedCompact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors

42 citations · 229 across the 23 of their papers we have counts for

collaborators
Showing 2021 · physics.app-phShow all

3 papers · 2 filters

physics.app-ph2021★ 6 cited

A small-signal description of black phosphorus transistor technologies for high-frequency applications

Leslie Valdez-Sandoval, Eloy Ramirez-Garcia, Saungeun Park +3

This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorous field-effect transistors (BPFETs). The proposed EC is ab…

physics.app-ph2021★ 10 cited

Multifunctional high-frequency circuit capabilities of ambipolar carbon nanotube FETs

Javier Noe Ramos-Silva, Anibal Pacheco-Sanchez, Eloy Ramirez-Garcia +1

An experimentally-calibrated carbon nanotube compact transistor model has been used here to design two high-frequency (HF) circuits with two different functionalities each: a phase…

physics.app-ph2021★ 11 cited

Unveiling the impact of the bias-dependent charge neutrality point on graphene-based multi-transistor applications

Francisco Pasadas, Alberto Medina-Rull, Pedro Carlos Feijoo +6

The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conduc…

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