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cond-mat.mtrl-sci2022★ 13 cited
A route for the top-down fabrication of ordered ultrathin GaN nanowires
Miriam Oliva, Vladimir Kaganer, Maximilian Pudelski +5
Ultrathin GaN nanowires (NWs) are attractive to maximize surface effects and as building block in high-frequency transistors. Here, we introduce a facile route for the top-down fab…
cond-mat.mtrl-sci2022★ 4 cited
Density control of GaN nanowires at the wafer scale using self-assembled SiN patches on sputtered TiN(111)
Thomas Auzelle, Miriam Oliva, Philipp John +3
The self-assembly of heteroepitaxial GaN nanowires using either molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) mostly results in wafer-scale ensembles wi…