29 citations · 123 across the 17 of their papers we have counts for
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Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films
Mani Azadmand, Tomas Auzelle, Jonas Lähnemann +7
We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionall…
Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductors Nanowires
L. Jaloustre, S. Le-Denmat, T. Auzelle +4
Piezoelectric semiconductor III-Nitride nanostructures have received increasing interest as an alternative material for energy harvesters, sensors, and self-sustainable electronics…
Electronic properties of air-exposed GaN and surfaces after several device processing compatible cleaning steps
Thomas Auzelle, Florian Ullrich, Sebastian Hietzschold +6
We report on the electronic properties of GaN and surfaces after three different and subsequent device processing compatible cleaning steps: HCl etching, ann…
Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation
Sergio Fernández-Garrido, Thomas Auzelle, Jonas Lähnemann +3
We demonstrate the top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation of pre-patterned GaN(0001) layers grown by hydride vapor phase epitaxy on A…
Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy
C. Sinito, P. Corfdir, C. Pfüller +14
Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high stru…