T. Auzelle

activity

20142026

most citedCathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires

29 citations · 123 across the 17 of their papers we have counts for

collaborators

Showing 2020Show all

2 papers · 1 filter

physics.app-ph2020★ 9 cited

External control of GaN band bending using phosphonate self-assembled monolayers

T. Auzelle, F. Ullrich, S. Hietzschold +7

We report on the optoelectronic properties of GaN $(0001)$ and $(1 1 ˉ 00)$ surfaces after their functionalization with phosphonic acid derivatives. To analyze the possible correl…

physics.app-ph2020★ 1 cited

Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN $_{x}$ : effects of surface electric fields

T. Auzelle, M. Azadmand, T. Flissikowski +8

GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formatio…

External control of GaN band bending using phosphonate self-assembled monolayers

Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx​: effects of surface electric fields

Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN $_{x}$ : effects of surface electric fields