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physics.app-ph2019
MoS Dual-gate Transistors with Electrostatically Doped Contacts
Fuyou Liao, Yaocheng Sheng, Zhongxun Guo +15
Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties f…
physics.app-ph2019★ 1 cited
High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture
Fuyou Liao, Zhongxun Guo, Yin Wang +13
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG stru…