activity
20102021
most citedGate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS transistor

86 citations · 120 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2021

Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach

Runsheng Wang, Zixuan Sun, Yue-Yang Liu +4

In this paper, the recent advances of our studies on hot carrier degradation (HCD) are presented from trap-based approach. The microscopic speculation of interface trap generation…

cond-mat.mtrl-sci2019★ 2 cited

Anharmonic corrections to the multiphonon deep-level charge capture ab initio calculations for semiconductors

Yao Xiao, Zi-Wu Wang, Lin Shi +3

Nonradiative carrier recombination at semiconductor deep centers is of great importance to both fundamental physics and device engineering. In this letter, we provide a revised ana…

physics.app-ph2019

MoS Dual-gate Transistors with Electrostatically Doped Contacts

Fuyou Liao, Yaocheng Sheng, Zhongxun Guo +15

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties f…

physics.app-ph2019★ 1 cited

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

Fuyou Liao, Zhongxun Guo, Yin Wang +13

In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG stru…

cond-mat.mes-hall2019

A large-scale first-principles quantum transport simulation method using plane waves

Meng Ye, Xiangwei Jiang, Shu-Shen Li +1

As the characteristic lengths of advanced electronic devices are approaching the atomic scale, ab initio simulation method, with fully consideration of quantum mechanical effects,…

physics.app-ph2017★ 86 cited

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS transistor

Xiaoxi Li, Zhiqiang Fan, Peizhi Liu +10

Atomically-thin 2D semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. H…

cond-mat.mtrl-sci2016★ 16 cited

SGO: An ultrafast engine for ab initio atomic structure global optimization by differential evolution

Zhanghui Chen, Weile Jia, Lin-Wang Wang

This paper presents a fast method for global search of atomic structures at ab initio level. The structures global optimization (SGO) engine consists of a high-efficiency different…

cond-mat.mes-hall2010★ 15 cited

Quantum Mechanical Simulation of Electronic Transport in Nanostructured Devices by Efficient Self-consistent Pseudopotential Calculation

Xiang-Wei Jiang, Shu-Shen Li, Jian-Bai Xia +1

We present a new empirical pseudopotential (EPM) calculation approach to simulate the million atom nanostructured semiconductor devices under potential bias using the periodic boun…