86 citations · 120 across the 8 of their papers we have counts for
3 papers · 1 filter
Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach
Runsheng Wang, Zixuan Sun, Yue-Yang Liu +4
In this paper, the recent advances of our studies on hot carrier degradation (HCD) are presented from trap-based approach. The microscopic speculation of interface trap generation…
A large-scale first-principles quantum transport simulation method using plane waves
Meng Ye, Xiangwei Jiang, Shu-Shen Li +1
As the characteristic lengths of advanced electronic devices are approaching the atomic scale, ab initio simulation method, with fully consideration of quantum mechanical effects,…
Quantum Mechanical Simulation of Electronic Transport in Nanostructured Devices by Efficient Self-consistent Pseudopotential Calculation
Xiang-Wei Jiang, Shu-Shen Li, Jian-Bai Xia +1
We present a new empirical pseudopotential (EPM) calculation approach to simulate the million atom nanostructured semiconductor devices under potential bias using the periodic boun…