86 citations · 120 across the 8 of their papers we have counts for
4 papers · 1 filter
Anharmonic corrections to the multiphonon deep-level charge capture ab initio calculations for semiconductors
Yao Xiao, Zi-Wu Wang, Lin Shi +3
Nonradiative carrier recombination at semiconductor deep centers is of great importance to both fundamental physics and device engineering. In this letter, we provide a revised ana…
MoS Dual-gate Transistors with Electrostatically Doped Contacts
Fuyou Liao, Yaocheng Sheng, Zhongxun Guo +15
Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties f…
High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture
Fuyou Liao, Zhongxun Guo, Yin Wang +13
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG stru…
A large-scale first-principles quantum transport simulation method using plane waves
Meng Ye, Xiangwei Jiang, Shu-Shen Li +1
As the characteristic lengths of advanced electronic devices are approaching the atomic scale, ab initio simulation method, with fully consideration of quantum mechanical effects,…