1.5k citations · 2.2k across the 8 of their papers we have counts for
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Defect scattering in graphene
Jian-Hao Chen, W. G. Cullen, C. Jang +2
Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scatteri…
Dynamic interfaces in an organic thin film
Chenggang Tao, Qiang Liu, Blake C. Riddick +4
Low-dimensional boundaries between phases and domains in organic thin films are important in charge transport and recombination. Here, fluctuations of interfacial boundaries in an…
Atomic Structure of Graphene on SiO2
Masa Ishigami, J. H. Chen, W. G. Cullen +2
We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e. a graphene sheet supported by an insulating sili…
Effect of Impurities on Pentacene Thin Film Growth for Field-Effect Transistors
Elba Gomar-Nadal, Brad R. Conrad, William G. Cullen +1
Pentacenequinone (PnQ) impurities have been introduced into a pentacene source material at number densities from 0.001 to 0.474 to quantify the relative effects of impurity content…
Effect of impurities on pentacene island nucleation
B. R. Conrad, Elba Gomar-Nadal, W. G. Cullen +3
Pentacenequinone (PnQ) impurities have been introduced into a pentacene source material in a controlled manner to quantify the relative effects of the impurity content on grain bou…
Percolative Effects on Noise in Pentacene Transistors
B. R. Conrad, W. G. Cullen, W. Yan +1
The 1/f noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducti…