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most citedIntrinsic electron mobility exceeding 1000 cm/Vs in multilayer InSe FETs

440 citations · 2.3k across the 34 of their papers we have counts for

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16 papers · 1 filter

cond-mat.mes-hall2020★ 10 cited

Electron-Electron Interactions in 2D Semiconductor InSe

Arvind Shankar Kumar, Kasun Premasiri, Min Gao +4

Electron-electron interactions (EEIs) in 2D van der Waals structures is one of the topics with high current interest in physics. We report the observation of a negative parabolic m…

cond-mat.mes-hall2018★ 72 cited

Tuning Rashba Spin-Orbit Coupling in Gated Multilayer InSe

Kasun Premasiri, Santosh Kumar Radha, Sukrit Sucharitakul +5

Manipulating the electron spin with the aid of spin-orbit coupling (SOC) is an indispensable element of spintronics. Electrostatically gating a material with strong SOC results in…

cond-mat.mes-hall2017★ 27 cited

Anisotropic electrical resistance in mesoscopic LaAlO/SrTiO devices with individual domain walls

Nicholas J. Goble, Richard Akrobetu, Hicham Zaid +4

The crystal structure of bulk SrTiO(STO) transitions from cubic to tetragonal at around 105K. Recent local scanning probe measurements of LaAlO/SrTiO (LAO/STO) interfac…

cond-mat.mes-hall2016★ 73 cited

Screening limited switching performance of multilayer 2D semiconductor FETs: the case for SnS

Sukrit Sucharitakul, Rajesh Kumar Ulaganathan, Raman Sankar +6

Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their…

cond-mat.mes-hall2015★ 440 cited

Intrinsic electron mobility exceeding 1000 cm/Vs in multilayer InSe FETs

Sukrit Sucharitakul, Nicholas J. Goble, U. Rajesh Kumar +5

Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, ho…

cond-mat.mes-hall2015★ 54 cited

Linear magneto-resistance versus weak antilocalization effects in BiTe films

Z. H. Wang, L. Yang, X. T. Zhao +2

In chalcogenide topological insulator materials, two types of magneto-resistance (MR) effects are widely discussed: a positive MR dip around zero magnetic field associated with the…

cond-mat.mes-hall2015★ 110 cited

Granularity Controlled Non-Saturating Linear Magneto-resistance in Topological Insulator Bi2Te3 Films

Z. H. Wang, L. Yang, X. J. Li +4

We report on the magneto-transport properties of chemical vapor deposition grown films of interconnected Bi2Te3 nanoplates. Similar to many other topological insulator (TI) materia…

cond-mat.mes-hall2013★ 2 cited

Impact of Short-Range Scattering on the Metallic Transport of Strongly Correlated 2D Holes in GaAs Quantum Wells

Nicholas J. Goble, John D. Watson, Michael J. Manfra +1

Understanding the non-monotonic behavior in the temperature dependent resistance, R(T), of strongly correlated two-dimensional (2D) carriers in clean semiconductors has been a cent…

cond-mat.mes-hall2013★ 38 cited

Metal-Insulator Transition in Variably Doped (Bi1-xSbx)2Se3 Nanosheets

Chee Huei Lee, Rui He, ZhenHua Wang +8

Topological insulators are novel quantum materials with metallic surface transport, but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions…

cond-mat.mes-hall2013★ 42 cited

Ambipolar Surface Conduction in Ternary Topological Insulator Bi_2(Te_{1-x}Se_x)_3 Nanoribbons

ZhenHua Wang, Richard L. J. Qiu, Chee Huei Lee +2

We report the composition and gate voltage induced tuning of transport properties in chemically synthesized Bi2(Te1-xSex)3 nanoribbons. It is found that increasing Se concentration…

cond-mat.mes-hall2013★ 191 cited

One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires

Yuan Tian, Mohammed R. Sakr, Jesse M. Kinder +5

We report electrical conductance and thermopower measurements on InAs nanowires synthesized by chemical vapor deposition. Gate modulation of the thermopower of individual InAs nano…

cond-mat.mes-hall2012★ 178 cited

Strong tuning of Rashba spin orbit interaction in single InAs nanowires

Dong Liang, Xuan P. A. Gao

A key concept in the emerging field of spintronics is the gate voltage or electric field control of spin precession via the effective magnetic field generated by the Rashba spin or…

cond-mat.mes-hall2011★ 281 cited

Two-dimensional Transport Induced Linear Magneto-Resistance in Topological Insulator BiSe Nanoribbons

Hao Tang, Dong Liang, Richard L. J. Qiu +1

We report the study of a novel linear magneto-resistance (MR) under perpendicular magnetic fields in Bi2Se3 nanoribbons. Through angular dependence magneto-transport experiments, w…

cond-mat.mes-hall2010★ 3 cited

Magneto-transport Effects in Topological Insulator BiSe Nanoribbons

Hao Tang, Dong Liang, Richard L. J. Qiu +1

Magneto-resistance (MR) of BiSe nanoribbons is studied over a broad range of temperature (=300K-2K) and under various magnetic field () orientations. The MR is strong…

cond-mat.mes-hall2009★ 21 cited

Anisotropic Magneto-conductance of InAs Nanowire: Angle Dependent Suppression of 1D Weak Localization

Dong Liang, Juan Du, Xuan P. A. Gao

The magneto-conductance of an InAs nanowire is investigated with respect to the relative orientation between external magnetic field and the nanowire axis. It is found that both th…

cond-mat.mes-hall2009★ 47 cited

One-dimensional Weak Localization of Electrons in a Single InAs Nanowire

Dong Liang, Mohammed R. Sakr, Xuan P. A. Gao

We report on low temperature (2-30K) electron transport and magneto-transport measurements of a chemically synthesized InAs nanowire. Both the temperature, T, and transverse magnet…