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Inelastic Scattering and Spin Polarization in Dilute Magnetic Semiconductor (Ga,Mn)Sb
Raghava P. Panguluri, B. Nadgorny, T. Wojtowicz +2
The Point Contact Andreev Reflection (PCAR) technique has already been used to measure the spin polarization of some of the dilute magnetic semiconductors, such as narrow-band (In,…
Anomalous Hall effect in (In,Mn)Sb dilute magnetic semiconductor
G. Mihaly, M. Csontos, S. Bordacs +5
High magnetic field study of Hall resistivity in the ferromagnetic phase of (In,Mn)Sb allows one to separate its normal and anomalous components. We show that the anomalous Hall te…
Definitive Evidence of Interlayer Coupling Between (Ga,Mn)As Layers Separated by a Nonmagnetic Spacer
B. J. Kirby, J. A. Borchers, X. Liu +3
We have used polarized neutron reflectometry to study the structural and magnetic properties of the individual layers in a series of (Al,Be,Ga)As/(Ga,Mn)As/GaAs/(Ga,Mn)As multilaye…
Coherent Magnetization Precession in GaMnAs induced by Ultrafast Optical Excitation
J. Qi, Y. Xu, N. Tolk +3
We use femtosecond optical pulses to induce, control and monitor magnetization precession in ferromagnetic Ga0.965Mn0.035As. At temperatures below ~40 K we observe coherent oscilla…
Weak localization in GaMnAs: evidence of impurity band transport
L. P. Rokhinson, Y. Lyanda-Geller, Z. Ge +4
We report the observation of negative magnetoresistance in the ferromagnetic semiconductor GaMnAs at low temperatures ( K) and low magnetic fields ( mT). We attribut…
Spin dependent resonant tunneling through 6 micron diameter double barrier resonant tunneling diode
Z. L. Fang, P. Wu, N. Kundtz +3
A vertical resonant tunneling diode (RTD) based on the paramagnetic Zn1-x-yMnyCdxSe system has been fabricated with a pillar diameter down to ~ 6 micron. The diode exhibits high qu…