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Evidence for reversible control of magnetization in a ferromagnetic material via spin-orbit magnetic field
A. Chernyshov, M. Overby, X. Liu +3
Conventional computer electronics creates a dichotomy between how information is processed and how it is stored. Silicon chips process information by controlling the flow of charge…
Ion-beam modification of the magnetic properties of GaMnAs epilayers
E. H. C. P. Sinnecker, G. M. Penello, T. G. Rappoport +5
We study the controlled introduction of defects in GaMnAs by irradiating the samples with energetic ion beams, which modify the magnetic properties of the DMS. Our study focuses on…
Carrier-mediated antiferromagnetic interlayer exchange coupling in diluted magnetic semiconductor multilayers GaMnAs/GaAs:Be
J. -H. Chung, S. J. Chung, Sanghoon Lee +5
We use neutron reflectometry to investigate the interlayer exchange coupling between GaMnAs ferromagnetic semiconductor layers separated by non-magnetic Be-doped…
Mechanical and Electronic Properties of Ferromagnetic GaMnAs Using Ultrafast Coherent Acoustic Phonons
J. Qi, J. A. Yan, H. Park +7
Ultrafast two-color pump-probe measurements, involving coherent acoustic phonon (CAP) waves, have provided information simultaneously on the mechanical properties and on the electr…
Memory Effect in the Photoinduced Femtosecond Rotation of Magnetization in the Ferromagnetic Semiconductor GaMnAs
J. Wang, I. Cotoros, X. Liu +4
We report a femtosecond response in photoinduced magnetization rotation in the ferromagnetic semiconductor GaMnAs, which allows for detection of a four-state magnetic memory at the…
Two-step model versus one-step model of the inter-polarization conversion and statistics of CdSe/ZnSe quantum dot elongations
A. V. Koudinov, B. R. Namozov, Yu. G. Kusrayev +3
The magneto-optical inter-polarization conversions by a layer of quantum dots have been investigated. Various types of polarization response of the sample were observed as a functi…