124 citations · 388 across the 53 of their papers we have counts for
8 papers · 1 filter
In-DRAM True Random Number Generation Using Simultaneous Multiple-Row Activation: An Experimental Study of Real DRAM Chips
Ismail Emir Yuksel, Ataberk Olgun, F. Nisa Bostanci +5
In this work, we experimentally demonstrate that it is possible to generate true random numbers at high throughput and low latency in commercial off-the-shelf (COTS) DRAM chips by…
ColumnDisturb: Understanding Column-based Read Disturbance in Real DRAM Chips and Implications for Future Systems
İsmail Emir Yüksel, Ataberk Olgun, F. Nisa Bostancı +3
We experimentally demonstrate a new widespread read disturbance phenomenon, ColumnDisturb, in real commodity DRAM chips. By repeatedly opening or keeping a DRAM row (aggressor row)…
Cleaning up the Mess: Re-Evaluating the Real-System Modeling Accuracy of Ramulator 2.0
F. Nisa Bostanci, Haocong Luo, Ataberk Olgun +4
A MICRO 2024 best paper runner-up publication (the Mess paper) with all three artifact badges awarded (including ``Reproducible'') proposes a new benchmark to evaluate real and sim…
TeraAgent: A Distributed Agent-Based Simulation Engine for Simulating Half a Trillion Agents
Lukas Breitwieser, Ahmad Hesam, Abdullah Giray Yağlıkçı +3
Agent-based simulation is a method for studying highly complex systems in disciplines as diverse as biology, medicine, sociology, economics, finance, and more. In this method, an a…
Understanding and Mitigating Covert Channel and Side Channel Vulnerabilities Introduced by RowHammer Defenses
F. Nisa Bostancı, Oğuzhan Canpolat, Ataberk Olgun +5
DRAM chips are vulnerable to read disturbance phenomena (e.g., RowHammer and RowPress), where repeatedly accessing or keeping open a DRAM row causes bitflips in nearby rows. Attack…
Variable Read Disturbance: An Experimental Analysis of Temporal Variation in DRAM Read Disturbance
Ataberk Olgun, F. Nisa Bostanci, Ismail Emir Yuksel +6
Modern DRAM chips are subject to read disturbance errors. State-of-the-art read disturbance mitigations rely on accurate and exhaustive characterization of the read disturbance thr…
Understanding RowHammer Under Reduced Refresh Latency: Experimental Analysis of Real DRAM Chips and Implications on Future Solutions
Yahya Can Tuğrul, A. Giray Yağlıkçı, İsmail Emir Yüksel +6
RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in physically nearby DRAM rows (victi…
Chronus: Understanding and Securing the Cutting-Edge Industry Solutions to DRAM Read Disturbance
Oğuzhan Canpolat, A. Giray Yağlıkçı, Geraldo F. Oliveira +6
We 1) present the first rigorous security, performance, energy, and cost analyses of the state-of-the-art on-DRAM-die read disturbance mitigation method, Per Row Activation Countin…