activity
20172023
most citedAttraction of indirect excitons in van der Waals heterostructures with three semiconducting layers

12 citations · 23 across the 4 of their papers we have counts for

collaborators
Showing cond-mat.mes-hallShow all

10 papers · 1 filter

cond-mat.mes-hall2023

Helical boundary modes from synthetic spin in a plasmonic lattice

Sang Hyun Park, Michael Sammon, Eugene Mele +1

Artificial lattices have been used as a platform to extend the application of topological physics beyond electronic systems. Here, using the two-dimensional Lieb lattice as a proto…

cond-mat.mes-hall2021

Broadband Focusing of Acoustic Plasmons in Graphene with an Applied Current

Michael Sammon, Dionisios Margetis, E. J. Mele +1

Non-reciprocal plasmons in current-driven, isotropic, and homogenous graphene with proximal metallic gates is theoretically explored. Nearby metallic gates screen the Coulomb inter…

cond-mat.mes-hall2020

Isotropically conducting (hidden) quantum Hall stripe phases in a two-dimensional electron gas

Yi Huang, M. Sammon, M. A. Zudov +1

Quantum Hall stripe (QHS) phases, predicted by the Hartree-Fock theory, are manifested in GaAs-based two-dimensional electron gases as giant resistance anisotropies. Here, we predi…

cond-mat.mes-hall20198 cited

Resistivity anisotropy of quantum Hall stripe phases

Michael Sammon, Xiaojun Fu, Yi Huang +8

Quantum Hall stripe phases near half-integer filling factors were predicted by Hartree-Fock (HF) theory and confirmed by discoveries of giant resistance anisotropies in…

cond-mat.mes-hall20191 cited

Giant violation of Wiedemann-Franz law in doping layers of modern AlGaAs heterostructures

M. Sammon, Mitali Banerjee, B. I. Shklovskii

We analyze the data of the recent paper Nature 559, 205 (2018) and show that it contains an observation of thermal and electric conductivities of the doping layers in GaAs/AlGaAs h…

cond-mat.mes-hall201912 cited

Attraction of indirect excitons in van der Waals heterostructures with three semiconducting layers

M. Sammon, B. I. Shklovskii

We study a capacitor made of three monolayers of transition metal dichalcogenide (TMD) separated by hexagonal Boron Nitride (hBN). We assume that the structure is symmetric with re…